BSS87 E6433 Infineon Technologies, BSS87 E6433 Datasheet - Page 6

• Manufacturer Part Number: BSS87 E6433
• Description: MOSFET N-CH 240V 260MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS87 E6433

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 260mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 260mA
• Vgs(th) (max) @ Id: 1.8V @ 108µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 97pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSS87E6433T; SP000082233

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
10
10
10
10
W
30
24
22
20
18
16
14
12
10
8
6
4
2
0
-60
3
2
1
0
0
BSS87
DS
= f (T
)
-20
6
D
GS
j
)
= 0.26 A, V
=0, f=1 MHz, T
20
12
98%
typ
60
18
GS
100
24
= 10 V
j
= 25 °C
°C
V
T
V
C
C
C
Rev. 1.41
j
oss
DS
iss
rss
180
36
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
10
10
10
10
1.6
1.4
1.2
0.8
0.6
0.4
A
V
-1
-2
2
1
-60
1
0
0
= f (T j )
BSS87
SD
)
0.4
-20
GS
0.8
= V
20
DS ;
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
2%
I
D
1.6
typ.
60
=108µA
98%
2
100
2010-01-27
2.4
BSS87
°C
V
V
T
SD
j
160
3