BSS87 Infineon Technologies, BSS87 Datasheet

N CH MOSFET, 240V, 290mA, P-SOT-89

BSS87

Manufacturer Part Number
BSS87
Description
N CH MOSFET, 240V, 290mA, P-SOT-89
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSS87

Transistor Polarity
N Channel
Continuous Drain Current Id
290mA
Drain Source Voltage Vds
240V
On Resistance Rds(on)
6ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.2V
Package
SOT-89
Vds (max)
240.0 V
Rds (on) (max) (@10v)
6,000.0 mOhm
Rds (on) (max) (@4.5v)
7,500.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Feature
· N-Channel
· Enhancement mode
· Logic Level
· dv/dt rated
SIPMOS Ò Small-Signal-Transistor
Type
BSS87
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation, related to min. footprint
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
A
A
A
A
=0.26A, V
=25°C
=70°C
=25°C
=25°C
DS
=192V, di/dt=200A/µs, T
Package
P-SOT89-4-2
j
= 25 °C, unless otherwise specified
Ordering Code
Q62702-S506
jmax
=150°C
Rev. 1.1
Page 1
Tape and Reel Information
E6327: 1000 pcs/reel
Symbol
I
I
dv/dt
V
P
T
D
D puls
j ,
GS
tot
T
st g
-55... +150
55/150/56
Class 1
Product Summary
V
R
I
D
Value
DS
DS(on)
0.26
0.21
1.04
±20
6
1
3
P-SOT89-4-2
2
2004-12-1
0.26
240
1
6
Marking
KA
BSS87
Unit
A
kV/µs
V
W
°C
VPS05558
2
V
W
A

Related parts for BSS87

BSS87 Summary of contents

Page 1

... Tape and Reel Information Q62702-S506 E6327: 1000 pcs/reel = 25 °C, unless otherwise specified Symbol puls dv/dt =150°C jmax Page 1 Product Summary DS(on P-SOT89-4 Value 0.26 0.21 1.04 6 ±20 GS Class 1 1 tot T -55... +150 st g 55/150/56 BSS87 240 0. VPS05558 Marking KA Unit A kV/µ °C 2004-12-1 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.1 Symbol R thJC R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSS87 Values Unit min. typ. max K 125 - - 70 Values Unit min. typ. max. 240 - - V 0.8 1 ...

Page 3

... V =192V, I =0.26A =192V, I =0.26A 10V GS V (plateau) V =192V 0. =25° = =120V /dt=100A/µ Page 3 BSS87 Values min. typ. max. 0. 5.8 7.3 - 3.7 5.5 - 3.5 5.2 - 17.6 26 0.14 0.21 - 1.7 2.5 - 3.7 5 1.04 - 0.82 1.2 - 53.6 80.4 ...

Page 4

... Transient thermal impedance Z thJA parameter : K 65.0µs 100 µ Page ³ BSS87 100 120 = BSS87 single pulse - 2004-12-1 BSS87 °C 160 0.50 0.20 0.10 0.05 0.02 0. ...

Page 5

... Rev. 1.1 6 Typ. drain-source on resistance R DS(on) parameter 2 Typ. forward transconductance g = f(I DS(on)max fs parameter: T 0.6 S 0.4 0.3 0.2 0.1 3 Page ° 2. 0.08 0.16 0.24 0. ° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2004-12-1 BSS87 3.5V 2.9V 4.1V 4. 10V 0 ...

Page 6

... Forward character. of reverse diode °C parameter iss C oss 10 C rss Page =108µ 98% 1.6 1.4 typ. 1 0.8 0.6 0.4 -60 - BSS87 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1.6 2 BSS87 °C 100 160 2004-12-1 ...

Page 7

... Typ. gate charge parameter 0.26 A pulsed BSS87 0 max 0 max 6 0 max Rev. 1.1 14 Drain-source breakdown voltage , V DS (BR)DSS = 25 °C j 291 V 276 271 266 261 256 251 246 241 236 231 226 221 216 - Page BSS87 - 100 2004-12-1 BSS87 °C 180 T j ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 Page 8 BSS87 2004-12-1 ...

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