BSS139 E6906 Infineon Technologies, BSS139 E6906 Datasheet - Page 6
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BSS139 E6906
Manufacturer Part Number
BSS139 E6906
Description
MOSFET N-CH 250V 100MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS139_L6327.pdf
(9 pages)
Specifications of BSS139 E6906
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
14 Ohm @ 0.1mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1V @ 56µA
Gate Charge (qg) @ Vgs
3.5nC @ 5V
Input Capacitance (ciss) @ Vds
76pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS139E6906XT
SP000055415
SP000055415
Rev. 1.62
9 Drain-source on-state resistance
R
11 Threshold voltage bands
I
D
DS(on)
=f(V
0.01
0.1
10
60
50
40
30
20
10
1
=f(T
GS
0
-60
-2
); V
j
); I
DS
D
-20
=3 V; T
=0.015 A; V
N
-1.5
20
j
=25 °C
%98
M
V
GS
L
T
GS
j
[V]
60
[°C]
=0 V
typ
K
100
-1
J
140
56 µA
180
-0.5
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typ. capacitances
C =f(V
GS(th)
1000
-0.5
-1.5
-2.5
100
10
-1
-2
-3
=f(T
DS
0
1
-60
); V
0
j
); V
D
GS
-20
=-3 V; f =1 MHz
DS
5
=3 V; I
20
10
D
=56 µA
V
T
DS
j
60
15
[°C]
%98
[V]
typ
%2
100
20
140
25
BSS139
Ciss
Crss
Coss
2006-11-27
180
30