BSS139 E6906 Infineon Technologies, BSS139 E6906 Datasheet - Page 5
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BSS139 E6906
Manufacturer Part Number
BSS139 E6906
Description
MOSFET N-CH 250V 100MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS139_L6327.pdf
(9 pages)
Specifications of BSS139 E6906
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
14 Ohm @ 0.1mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1V @ 56µA
Gate Charge (qg) @ Vgs
3.5nC @ 5V
Input Capacitance (ciss) @ Vds
76pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS139E6906XT
SP000055415
SP000055415
Rev. 1.62
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.16
0.12
0.08
0.04
0.25
0.15
0.05
0.2
0.3
0.2
0.1
DS
GS
0
0
); T
-2
0
); |V
j
=25 °C
GS
DS
V 10
|>2|I
2
V 1
D
|R
-1
DS(on)max
4
V
V
DS
GS
[V]
[V]
6
0
-55 °C
8
V 0.1-
V 0.2-
V 0.5
V 0.1
150 °C
V 0
V 0.2
25 °C
page 5
10
1
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.25
0.15
0.05
0.2
0.1
30
20
10
D
0
=f(I
0
0.00
); T
0
D
j
); T
=25 °C
GS
j
=25 °C
-0.2 V
0.05
0.04
-0.1 V
0 V
0.1 V
I
I
0.10
D
0.08
D
[A]
[A]
0.2 V
0.15
0.12
0.5 V
BSS139
10 V
1 V
2006-11-27
0.20
0.16