BSS139 E6906 Infineon Technologies, BSS139 E6906 Datasheet
BSS139 E6906
Specifications of BSS139 E6906
SP000055415
Related parts for BSS139 E6906
BSS139 E6906 Summary of contents
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SIPMOS Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V indicator on reel GS(th) • Pb-free lead-plating; RoHS compliant Type Package BSS139 PG-SOT-23 BSS139 PG-SOT-23 Maximum ratings =25 °C, unless otherwise ...
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Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current Gate-source leakage current On-state drain current Drain-source on-state resistance Transconductance Threshold voltage V sorted in bands GS(th) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot A 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by on-state resistance ...
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Typ. output characteristics I =f =25 ° parameter 0 0.16 0.12 0.08 0. Typ. transfer characteristics I =f |>2|I |R ...
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Drain-source on-state resistance R =f =0.015 A; V DS(on % -60 - Threshold voltage bands I =f =25 °C D ...
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Forward characteristics of reverse diode I =f parameter 0.1 150 °C 0.01 0.001 0 0 Drain-source breakdown voltage V =f =250 µA BR(DSS 300 280 260 240 ...
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Package Outline: Footprint: Dimensions in mm Rev. 1.62 Packaging: page 8 BSS139 2006-11-27 ...
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