BSS123 E6433 Infineon Technologies, BSS123 E6433 Datasheet - Page 5

• Manufacturer Part Number: BSS123 E6433
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS123 E6433

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 1.8V @ 50µA
• Gate Charge (qg) @ Vgs: 2.67nC @ 10V
• Input Capacitance (ciss) @ Vds: 69pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS123E6433XT; SP000011166

5 Typ. output characteristic
I
parameter: T
7 Typ. transfer characteristics
I
parameter: T
D
D
= f ( V
= f ( V
0.55
0.45
0.35
0.25
0.15
0.05
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.7
0.5
0.4
0.3
0.2
0.1
A
A
0
0
0
0
10V
5V
4.5V
4.1V
3.9V
3.7V
3.5V
3.1V
2.9V
2.3V
DS
GS
0.5
0.5
)
); V
j
j
1
1
= 25 °C, V
= 25 °C
DS
1.5
1.5
2 x I
2
2
2.5
2.5
D
GS
x R
3
3
DS(on)max
3.5
3.5
4
4
V
V
V
V
Rev. 1.41
DS
GS
5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. forward transconductance
g
parameter: T
fs
DS(on)
= f(I
0.25
0.15
0.05
0.4
0.3
0.2
0.1
S
20
16
14
12
10
8
6
4
2
0
0
0
0
D
= f (I
)
0.1
0.1
D
j
j
= 25 °C, V
= 25 °C
)
0.2
0.2
0.3
0.3
GS
0.4
0.4
0.5
0.5
2010-05-12
BSS123
A
A
I
I
D
D
2.3V
2.9V
3.1V
3.5V
3.7V
3.9V
4.1V
4.5V
5.0V
10V
0.7
0.7