BSS123 L6327 Infineon Technologies, BSS123 L6327 Datasheet
BSS123 L6327
Specifications of BSS123 L6327
BSS123L6327INTR
BSS123L6327XT
SP000084574
Related parts for BSS123 L6327
BSS123 L6327 Summary of contents
Page 1
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to AEC Q101 Type Package PG-SOT23 BSS123 BSS123 PG-SOT23 Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current T ...
Page 2
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimum footprint Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =250µ Gate threshold voltage =50µA D Zero gate voltage drain ...
Page 3
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
Page 4
Power dissipation tot A BSS123 0.38 W 0.32 0.28 0.24 0.2 0.16 0.12 0.08 0. Safe operating area ...
Page 5
Typ. output characteristic parameter ° 0.7 10V A 5V 4.5V 0.6 4.1V 3.9V 0.55 3.7V 0.5 3.5V 3.1V 0.45 2.9V 0.4 2.3V 0.35 0.3 0.25 ...
Page 6
Drain-source on-state resistance DS(on) j parameter : BSS123 98 typ 2 0 -60 - Typ. ...
Page 7
Typ. gate charge parameter 0.17 A pulsed BSS123 0 max 0 max 6 0 max 4 ...
Page 8
... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...