BSS123 E6433 Infineon Technologies, BSS123 E6433 Datasheet - Page 3

• Manufacturer Part Number: BSS123 E6433
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS123 E6433

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 1.8V @ 50µA
• Gate Charge (qg) @ Vgs: 2.67nC @ 10V
• Input Capacitance (ciss) @ Vds: 69pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS123E6433XT; SP000011166

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
g
C
C
C
t
t
t
t
I
V
t
Q
Symbol
j
Q
Q
Q
V
d(on)
r
d(off)
f
S
SM
rr
= 25 °C, unless otherwise specified
fs
iss
oss
rss
SD
rr
(plateau) V
gs
gd
g
Rev. 1.41
V
I
V
f=1MHz
V
I
T
V
V
di
V
V
V
D
D
Page 3
A
DS
GS
DD
DD
DD
GS
DD
GS
R
F
=0.14A
=0.17A, R
=25°C
=50V, I
/dt=100A/µs
=0, V
=50V, V
=0, I
=80V, I
=80V, I
=0 to 10V
=80V, I
2*I
Conditions
D
F
*R
DS
F =
= I
D
D
D
DS(on)max
G
GS
=25V,
l
S
S
=0.17A
=0.17A,
=6
= 0.17 A
,
=10V,
,
min.
0.09
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.055 0.082 nC
0.19
0.81
27.6
10.5
typ.
0.77
1.78
8.5
2.7
3.1
9.9
2.6
55
25
5
-
-
2010-05-12
max.
10.6
14.8
0.17
0.68
41.1
15.7
1.15
2.67
6.3
4.6
1.2
69
37
BSS123
4
-
-
Unit
S
pF
ns
A
V
ns
nC
V