NTD110N02RT4G ON Semiconductor, NTD110N02RT4G Datasheet - Page 6
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NTD110N02RT4G
Manufacturer Part Number
NTD110N02RT4G
Description
MOSFET N-CH 24V 12.5A DPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD110N02R-001.pdf
(7 pages)
Specifications of NTD110N02RT4G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Input Capacitance (ciss) @ Vds
3440pF @ 20V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0041 Ohms
Forward Transconductance Gfs (max / Min)
44 S
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
2.88 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD110N02RT4GOS
NTD110N02RT4GOS
NTD110N02RT4GOSTR
NTD110N02RT4GOS
NTD110N02RT4GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD110N02RT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD110N02RT4G
Manufacturer:
ON/安森美
Quantity:
20 000
L3
L4
b2
e
1
b3
4
2
E
3
b
A
D
0.005 (0.13)
B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
DETAIL A
C
0.228
5.80
c
L2
A
GAUGE
PLANE
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
DPAK (SINGLE GUAGE)
ROTATED 90 CW
0.244
c2
6.20
DETAIL A
H
C
L
http://onsemi.com
CASE 369AA−01
L1
ISSUE B
5
0.101
2.58
6
A1
0.118
3.0
H
0.063
1.6
SCALE 3:1
C
Z
SEATING
PLANE
6.172
0.243
inches
NOTES:
mm
1. DIMENSIONING AND TOLERANCING PER ASME
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
5. DIMENSIONS D AND E ARE DETERMINED AT THE
6. DATUMS A AND B ARE DETERMINED AT DATUM
Y14.5M, 1994.
MENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
OUTERMOST EXTREMES OF THE PLASTIC BODY.
PLANE H.
DIM
STYLE 2:
A1
b2
b3
c2
L1
L2
L3
L4
A
D
E
H
b
c
e
L
Z
PIN 1. GATE
0.086
0.000
0.025
0.030
0.180
0.018
0.018
0.235
0.250
0.370
0.055
0.035
0.155
2. DRAIN
3. SOURCE
4. DRAIN
MIN
−−−
0.090 BSC
0.108 REF
0.020 BSC
INCHES
0.094
0.005
0.035
0.045
0.215
0.024
0.024
0.245
0.265
0.410
0.070
0.050
0.040
MAX
−−−
MILLIMETERS
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
9.40
1.40
0.89
3.93
MIN
−−−
2.29 BSC
0.51 BSC
2.74 REF
10.41
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
1.78
1.27
1.01
−−−