NTD110N02RT4G ON Semiconductor, NTD110N02RT4G Datasheet - Page 4

• Manufacturer Part Number: NTD110N02RT4G
• Description: MOSFET N-CH 24V 12.5A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD110N02RT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3440pF @ 20V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0041 Ohms
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 2.88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD110N02RT4GOS; NTD110N02RT4GOS; NTD110N02RT4GOSTR

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5000
4000
3000
2000
1000
1000
100
10
0
1
10
1
C
C
V
I
V
Figure 9. Resistive Switching Time Variation
D
iss
rss
DS
GS
= 55 A
= 10 V
= 10 V
V
5
DS
Figure 7. Capacitance Variation
= 0 V
V
R
GS
versus Gate Resistance
G
, GATE RESISTANCE (W)
0
V
GS
V
DS
= 0 V
10
1000
5
100
1.0
10
t
d(on)
0.1
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
10
C
GS
V
= 25°C
DS
= 20 V
t
r
t
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
d(off)
T
J
15
R
Thermal Limit
Package Limit
= 25°C
t
DS(on)
http://onsemi.com
f
Safe Operating Area
1.0
C
C
C
rss
oss
iss
Limit
100
20
4
5
4
3
2
1
0
120
100
0
80
60
40
20
V
0
0.4
DS
Q
Drain−to−Source Voltage versus Total Charge
GS
10
V
T
J
GS
Figure 10. Diode Forward Voltage versus
V
= 25°C
SD
5
= 0 V
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
g
Figure 8. Gate−to−Source and
, TOTAL GATE CHARGE (nC)
1 ms
10 ms
dc
0.6
10
Q
100
DS
Q
T
Current
0.8
15
20
I
T
1.0
D
J
= 40 A
= 25°C
V
GS
25
20
16
12
8
4
0
1.2