NTD110N02RT4G ON Semiconductor, NTD110N02RT4G Datasheet - Page 4
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NTD110N02RT4G
Manufacturer Part Number
NTD110N02RT4G
Description
MOSFET N-CH 24V 12.5A DPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD110N02R-001.pdf
(7 pages)
Specifications of NTD110N02RT4G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Input Capacitance (ciss) @ Vds
3440pF @ 20V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0041 Ohms
Forward Transconductance Gfs (max / Min)
44 S
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
2.88 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD110N02RT4GOS
NTD110N02RT4GOS
NTD110N02RT4GOSTR
NTD110N02RT4GOS
NTD110N02RT4GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD110N02RT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD110N02RT4G
Manufacturer:
ON/安森美
Quantity:
20 000
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5000
4000
3000
2000
1000
1000
100
10
0
1
10
1
C
C
V
I
V
Figure 9. Resistive Switching Time Variation
D
iss
rss
DS
GS
= 55 A
= 10 V
= 10 V
V
5
DS
Figure 7. Capacitance Variation
= 0 V
V
R
GS
versus Gate Resistance
G
, GATE RESISTANCE (W)
0
V
GS
V
DS
= 0 V
10
1000
5
100
1.0
10
t
d(on)
0.1
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
10
C
GS
V
= 25°C
DS
= 20 V
t
r
t
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
d(off)
T
J
15
R
Thermal Limit
Package Limit
= 25°C
t
DS(on)
http://onsemi.com
f
Safe Operating Area
1.0
C
C
C
rss
oss
iss
Limit
100
20
4
5
4
3
2
1
0
120
100
0
80
60
40
20
V
0
0.4
DS
Q
Drain−to−Source Voltage versus Total Charge
GS
10
V
T
J
GS
Figure 10. Diode Forward Voltage versus
V
= 25°C
SD
5
= 0 V
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
g
Figure 8. Gate−to−Source and
, TOTAL GATE CHARGE (nC)
1 ms
10 ms
dc
0.6
10
Q
100
DS
Q
T
Current
0.8
15
20
I
T
1.0
D
J
= 40 A
= 25°C
V
GS
25
20
16
12
8
4
0
1.2