NTD110N02RT4G ON Semiconductor, NTD110N02RT4G Datasheet

NTD110N02RT4G

Manufacturer Part Number

NTD110N02RT4G

Description

MOSFET N-CH 24V 12.5A DPAK

Manufacturer

ON Semiconductor

Datasheet

1.NTD110N02R-001.pdf (7 pages)

Specifications of NTD110N02RT4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.6 mOhm @ 20A, 10V

Drain To Source Voltage (vdss)

24V

Current - Continuous Drain (id) @ 25° C

12.5A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

28nC @ 4.5V

Input Capacitance (ciss) @ Vds

3440pF @ 20V

Power - Max

1.5W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0041 Ohms

Forward Transconductance Gfs (max / Min)

44 S

Drain-source Breakdown Voltage

24 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

110 A

Power Dissipation

2.88 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTD110N02RT4GOS
NTD110N02RT4GOS
NTD110N02RT4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD110N02RT4G

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTD110N02RT4G

Manufacturer:

ON/安森美

Quantity:

20 000

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NTD110N02R

Power MOSFET

24 V, 110 A, N−Channel DPAK

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 0.5 sq in drain pad size.

2. When surface mounted to an FR4 board using the minimum recommended

MAXIMUM RATINGS

October, 2010 − Rev. 9

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Thermal Resistance − Junction−to−Case

Total Power Dissipation @ T

Drain Current

Limited by Package

Limited by Wires

Thermal Resistance

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Maximum Lead Temperature for Soldering

Purposes, (1/8″ from case for 10 s)

High−Efficiency DC−DC Converters

Planar HD3e Process for Fast Switching Performance

Low R

Low C

Low Gate Charge

Optimized for High Side Switching Requirements in

These Devices are Pb−Free and are RoHS Compliant

pad size.

− Continuous @ T

− Single Pulse (t

− Junction−to−Ambient (Note 1)

− Total Power Dissipation @ T

− Drain Current − Continuous @ T

− Junction−to−Ambient (Note 2)

− Total Power Dissipation @ T

− Drain Current − Continuous @ T

Energy − Starting T

= 15.5 Apk, L = 1.0 mH, R

= 50 Vdc, V

DS(on)

iss

to Minimize Driver Loss

to Minimize Conduction Loss

Rating

= 10 ms)

= 25°C

= 25°C, Chip

= 25°C

= 10 Vdc,

= 25°C

= 25°C unless otherwise noted)

= 25°C

= 25 W)

= 25°C

Symbol

DSS

, T

qJC

qJA

stg

−55 to

Value

1.35

2.88

17.5

12.5

±20

100

175

120

260

110

1.5

°C/W

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

(Surface Mount)

(BR)DSS

Gate

24 V

1 2

CASE 369AA

STYLE 2

DPAK

ORDERING INFORMATION

Drain

T110N2 = Device Code

& PIN ASSIGNMENTS

MARKING DIAGRAM

http://onsemi.com

Source

4.1 mW @ 10 V

= Year

= Work Week

= Pb−Free Package

DS(on)

N−Channel

Publication Order Number:

TYP

(Straight Lead)

Gate

CASE 369D

STYLE 2

NTD110N02R/D

DPAK

Drain

110 A

MAX

Source

Related parts for NTD110N02RT4G

NTD110N02RT4G Summary of contents

Page 1

NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • Planar HD3e Process for Fast Switching Performance • Low R to Minimize Conduction Loss DS(on) • Low C to Minimize Driver Loss iss • Low Gate Charge • Optimized ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 250 mA Positive Temperature Coefficient Zero Gate Voltage Drain Current ( ...

Page 3

150 4 125 4 100 3 3 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS ...

Page 4

4000 iss 3000 2000 C rss 1000 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 V = ...

Page 5

... Single Pulse 0.01 0.00001 0.0001 ORDERING INFORMATION Device NTD110N02RG NTD110N02R−001G NTD110N02RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.001 0.01 t, TIME (s) Figure 12. Thermal Response Package DPAK (Pb− ...

Page 6

... DETAIL 0.005 (0.13 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6 ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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