NTD110N02RT4G ON Semiconductor, NTD110N02RT4G Datasheet - Page 3

• Manufacturer Part Number: NTD110N02RT4G
• Description: MOSFET N-CH 24V 12.5A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD110N02RT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3440pF @ 20V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0041 Ohms
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 2.88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD110N02RT4GOS; NTD110N02RT4GOS; NTD110N02RT4GOSTR

0.03
0.02
0.01
175
150
125
100
75
50
25
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
−50
0
2
I
V
D
GS
V
−25
= 55 A
V
DS
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
8 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6 V
Figure 3. On−Resistance versus
2
10 V
T
J
0
, JUNCTION TEMPERATURE (°C)
4
Gate−to−Source Voltage
25
4
Temperature
50
4.2 V
3.8 V
3.6 V
3.4 V
3.2 V
4.5 V
6
5 V
4 V
75
6
100
8
125
I
T
8
D
T
J
J
= 110 A
= 25°C
= 25°C
http://onsemi.com
150
2.8 V
2.6 V
2.4 V
3 V
175
10
10
3
100,000
10,000
0.014
0.012
0.008
0.006
0.004
0.002
1000
0.01
100
210
180
150
120
10
90
60
30
0
0
20
0
0
Figure 4. On−Resistance versus Drain Current
T
V
V
T
Figure 6. Drain−to−Source Leakage Current
J
DS
GS
J
40
= 25°C
V
T
= 25°C
V
≥ 10 V
DS
J
= 0 V
GS
= 175°C
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
60
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5.0
I
2
D
80
, DRAIN CURRENT (AMPS)
T
J
and Gate Voltage
100
= −55°C
versus Voltage
10
V
V
T
T
GS
GS
120
J
J
= 175°C
= 100°C
= 4.5 V
= 10 V
4
140
15
160
180
6
20
200
220
240
25
8