NTD110N02RT4G ON Semiconductor, NTD110N02RT4G Datasheet - Page 3
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NTD110N02RT4G
Manufacturer Part Number
NTD110N02RT4G
Description
MOSFET N-CH 24V 12.5A DPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD110N02R-001.pdf
(7 pages)
Specifications of NTD110N02RT4G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Input Capacitance (ciss) @ Vds
3440pF @ 20V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0041 Ohms
Forward Transconductance Gfs (max / Min)
44 S
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Power Dissipation
2.88 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD110N02RT4GOS
NTD110N02RT4GOS
NTD110N02RT4GOSTR
NTD110N02RT4GOS
NTD110N02RT4GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD110N02RT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD110N02RT4G
Manufacturer:
ON/安森美
Quantity:
20 000
0.03
0.02
0.01
175
150
125
100
75
50
25
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
−50
0
2
I
V
D
GS
V
−25
= 55 A
V
DS
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
8 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6 V
Figure 3. On−Resistance versus
2
10 V
T
J
0
, JUNCTION TEMPERATURE (°C)
4
Gate−to−Source Voltage
25
4
Temperature
50
4.2 V
3.8 V
3.6 V
3.4 V
3.2 V
4.5 V
6
5 V
4 V
75
6
100
8
125
I
T
8
D
T
J
J
= 110 A
= 25°C
= 25°C
http://onsemi.com
150
2.8 V
2.6 V
2.4 V
3 V
175
10
10
3
100,000
10,000
0.014
0.012
0.008
0.006
0.004
0.002
1000
0.01
100
210
180
150
120
10
90
60
30
0
0
20
0
0
Figure 4. On−Resistance versus Drain Current
T
V
V
T
Figure 6. Drain−to−Source Leakage Current
J
DS
GS
J
40
= 25°C
V
T
= 25°C
V
≥ 10 V
DS
J
= 0 V
GS
= 175°C
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
60
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5.0
I
2
D
80
, DRAIN CURRENT (AMPS)
T
J
and Gate Voltage
100
= −55°C
versus Voltage
10
V
V
T
T
GS
GS
120
J
J
= 175°C
= 100°C
= 4.5 V
= 10 V
4
140
15
160
180
6
20
200
220
240
25
8