BSS192PE6327 Infineon Technologies, BSS192PE6327 Datasheet - Page 5

• Manufacturer Part Number: BSS192PE6327
• Description: MOSFET P-CH 250V 190MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS192PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 Ohm @ 190mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 190mA
• Vgs(th) (max) @ Id: 2V @ 130µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 104pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS192PE6327INTR

5 Typ. output characteristic
I
parameter: T j =25°C, -V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f ( V
= f (V
0.7
0.5
0.4
0.3
0.2
0.1
0.7
A
0.5
0.4
0.3
0.2
0.1
A
0
0
0
0
DS
GS
10V
6V
4.6V
4V
3.6V
3.4V
3.2V
2.8V
2.6V
2.4V
1
)
0.5
); |V
j
2
= 25 °C
DS |
1
3
2 x |I
4
1.5
GS
5
D
2
| x R
6
2.5
7
DS(on)max
8
V
-V
-V
V
Preliminary data
DS
GS
3.5
10
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: T j =25°C
fs
DS(on)
= f(I
10.5
7.5
4.5
1.5
0.8
0.6
0.5
0.4
0.3
0.2
0.1
S
15
12
9
6
3
0
0
0
0
D
= f (I
)
0.1
0.1
D
GS
)
2.4V 2.6V
; T j =25°C, -V
0.2
0.2
0.3
0.3
2.8V
0.4
0.4
GS
0.5
0.5
BSS 192 P
2002-07-25
A
A
3.2V
10V
6V
4.6V
4V
3.6V
3.4V
-I
-I
D
D
0.7
0.7