BSS192PE6327 Infineon Technologies, BSS192PE6327 Datasheet
BSS192PE6327
Specifications of BSS192PE6327
Related parts for BSS192PE6327
BSS192PE6327 Summary of contents
Page 1
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Type Package BSS 192 P SOT89 Maximum Ratings Parameter Continuous drain current T A =25°C T =70°C A Pulsed drain current T =25°C A Reverse diode dv/dt ...
Page 2
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 2) Thermal resistance, junction - ambient, leaded Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =-250µ Gate threshold voltage ...
Page 3
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
Page 4
Power dissipation tot BSS 192 P 1.1 W 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 Safe operating area ...
Page 5
Typ. output characteristic parameter =25° 0.7 10V 6V A 4.6V 4V 3.6V 3.4V 0.5 3.2V 2.8V 2.6V 0.4 2.4V 0.3 0.2 0 ...
Page 6
Drain-source on-state resistance DS(on) j parameter : I = -0. BSS 192 98% 12 typ -60 - Typ. capacitances C ...
Page 7
Typ. gate charge Gate parameter -0.19 A pulsed °C D BSS 192 P -16 V -12 -10 -8 20% 50 ...
Page 8
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...