BSS192P L6327 Infineon Technologies
![MOSFET P-CH 250V 190MA SOT-89](/photos/5/32/53229/448-sot-89_sml.jpg)
BSS192P L6327
Manufacturer Part Number
BSS192P L6327
Description
MOSFET P-CH 250V 190MA SOT-89
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Specifications of BSS192P L6327
Package / Case
SOT-89
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 Ohm @ 190mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
190mA
Vgs(th) (max) @ Id
2V @ 130µA
Gate Charge (qg) @ Vgs
6.1nC @ 10V
Input Capacitance (ciss) @ Vds
104pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
12 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.19 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSS192P L6327
BSS192PL6327INTR
BSS192PL6327XT
SP000095795
BSS192PL6327INTR
BSS192PL6327XT
SP000095795