BSP317PE6327 Infineon Technologies, BSP317PE6327 Datasheet - Page 7

• Manufacturer Part Number: BSP317PE6327
• Description: MOSFET P-CH 250V 430MA SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP317PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 430mA
• Vgs(th) (max) @ Id: 2V @ 370µA
• Gate Charge (qg) @ Vgs: 15.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 262pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP317PE6327INTR

Rev.2.0
13 Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f (Q
V
-8
-6
-4
-2
0
0
BSP 317 P
2
Gate
D
= -0.43 A pulsed, T
4
)
6
20%
50%
80%
8
10
12
j
14
= 25°C
nC
|Q
G
|
18
Page 7
14 Drain-source breakdown voltage
V
(BR)DSS
-300
-285
-280
-275
-270
-265
-260
-255
-250
-245
-240
-235
-230
-225
V
-60
BSP 317 P
= f (T
-20
j
)
20
60
100
BSP317P
2008-03-27
°C
T
j
180