BSP317PE6327 Infineon Technologies, BSP317PE6327 Datasheet - Page 3

• Manufacturer Part Number: BSP317PE6327
• Description: MOSFET P-CH 250V 430MA SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP317PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 430mA
• Vgs(th) (max) @ Id: 2V @ 370µA
• Gate Charge (qg) @ Vgs: 15.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 262pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP317PE6327INTR

Rev.2.0
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
|V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
GS
DD
DD
DD
GS
DD
A
GS
R
F
DS
=-0.34A
=-0.43A, R
=25°C
=-125V, I
/dt=100A/µs
=0, V
=-30V, V
=-200V, I
=-200V, I
=0 to -10V
=-200V, I
=0, I
|≥2*|I
Conditions
F
DS
D
=-0.43A
|*R
F =
=-25V,
G
GS
D
D
D
DS(on)max
=6Ω
l
=-0.43A
=-0.43A,
=-0.43A
S
=-10V,
,
,
min.
0.38
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-11.6
-0.84
0.76
13.4
11.1
typ.
210
254
-0.5
-2.8
210
5.7
30
67
92
-4
-
-
BSP317P
2008-03-27
max.
-0.65 nC
-15.1
-0.43 A
-1.72
16.7
16.6
262
381
100
-5.2
-1.2
138
315
8.5
37
-
-
Unit
S
pF
ns
V
V
ns
nC