BSP317PE6327 Infineon Technologies, BSP317PE6327 Datasheet - Page 4

• Manufacturer Part Number: BSP317PE6327
• Description: MOSFET P-CH 250V 430MA SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP317PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 430mA
• Vgs(th) (max) @ Id: 2V @ 370µA
• Gate Charge (qg) @ Vgs: 15.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 262pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP317PE6327INTR

Rev.2.0
1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T A = 25°C
D
tot
= f ( V
-10
-10
-10
-10
-10
= f (T A )
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
-3
1
0
1
0
-10
0
BSP 317 P
BSP 317 P
DS
-1
20
)
40
-10
0
60
80
-10
1
100
120
-10
DC
t p = 140.0µs
2
°C
T
V
1 ms
10 ms
V
A
DS
160
-10
Page 4
3
2 Drain current
I
parameter: |V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T A )
K/W
-0.35
-0.25
-0.15
-0.05
10
10
10
10
-0.5
-0.4
-0.3
-0.2
-0.1
10
10
10
A
= f (t
-1
-2
-3
-4
0
2
1
0
10
0
BSP 317 P
BSP 317 P
-7
p
20
10
)
single pulse
-6
GS
40
10
| ≥ 10V
p
/T
-5
60
10
-4
80
10
100
-3
10
BSP317P
2008-03-27
120
-2
D = 0.50
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0