BSP317PE6327 Infineon Technologies, BSP317PE6327 Datasheet - Page 5

• Manufacturer Part Number: BSP317PE6327
• Description: MOSFET P-CH 250V 430MA SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP317PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 430mA
• Vgs(th) (max) @ Id: 2V @ 370µA
• Gate Charge (qg) @ Vgs: 15.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 262pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP317PE6327INTR

Rev.2.0
5 Typ. output characteristic
I
parameter: T j =25°C, -V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f ( V
= f (V
1.6
A
1.2
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.6
0.4
0.2
A
1
0
1
0
0
0
DS
GS
10V
5V
4.4V
3.6V
3.2V
2.8V
2.4V
2.2V
0.5
0.4
)
); |V
j
1
0.8
= 25 °C
DS |
1.5
1.2
≥ 2 x |I
2
1.6
2.5
GS
D
2
| x R
3
2.4
3.5
DS(on)max
2.8
4
-V
V
-V
V
DS
GS
3.6
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: T j =25°C
fs
DS(on)
= f(I
Ω
1.4
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
S
10
8
7
6
5
4
3
2
1
0
1
0
0
0
D
= f (I
)
0.2
0.2
D
GS
)
0.4
0.4
; T j =25°C, -V
0.6
0.6
0.8
0.8
1
1
GS
BSP317P
2008-03-27
1.2
1.2
2.2V
2.4V
2.8V
3.2V
3.6V
4.4V
5V
10V
A
A
-I
-I
D
D
1.6
1.6