BSP315P-E6327 Infineon Technologies, BSP315P-E6327 Datasheet - Page 8

• Manufacturer Part Number: BSP315P-E6327
• Description: MOSFET P-CH 60V 1.17A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP315P-E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.17A
• Vgs(th) (max) @ Id: 2V @ 160µA
• Gate Charge (qg) @ Vgs: 7.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP315P; BSP315PINTR

Avalanche Energy E
parameter: I
R
Drain-source breakdown voltage
V
Rev.1.4
(BR)DSS
GS
mJ
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
25
15
10
= 25
5
0
-60
25
BSP 315 P
= f ( T
45
-20
D
= -1.17 A , V
j
)
65
20
85
AS
60
= f ( T
105
DD
100
j
125
)
= -25 V
°C
°C
T
T
j
j
165
180
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0.0
BSP 315 P
1.0
Gate
D
0,2
= -1.17 A pulsed
2.0
)
V
DS max
3.0
4.0
5.0
0,8
BSP 315 P
6.0
2007-02-08
V
DS max
nC
Q
Gate
8.0