BSP315P Infineon Technologies, BSP315P Datasheet

P CH MOSFET, -60V, 1.17A, SOT-223

BSP315P

Manufacturer Part Number
BSP315P
Description
P CH MOSFET, -60V, 1.17A, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP315P

Transistor Polarity
P Channel
Continuous Drain Current Id
1.17A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1.5V
Package
SOT-223
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
800.0 mOhm
Rds (on) (max) (@4.5v)
1,400.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP315P
Manufacturer:
INF
Quantity:
2 000
Part Number:
BSP315P
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
BSP315P H6327
Quantity:
4 800
Part Number:
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Part Number:
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Manufacturer:
ON
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Part Number:
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Manufacturer:
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Quantity:
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Type
BSP315 P
BSP315 P
SIPMOS
Features
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Rev.1.3
Enhancement mode
A
A
A
jmax
A
P-Channel
Avalanche rated
Logic Level
d v /d t rated
= -1.17 A, V
= -1.17 A , V
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 150 °C
Package
P-SOT-223
PG-SOT-223
Small-Signal-Transistor
DS
DD
= -48 V, d i /d t = 200 A/µs,
= -25 V, R
j
= 25 °C, unless otherwise specified
GS
Tape and Reel Information
E6327
L6327
= 25
Product Summary
Drain source voltage
Drain-Source on-state resistance R
Continuous drain current
jmax
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
j ,
AS
AR
GS
tot
T
stg
Pin 1
-55...+150
55/150/56
G
V
I
Value
-1.17
-0.94
-4.68
D
0.18
DS
DS(on)
1.8
24
6
20
4
Pin2/4
D
BSP 315 P
-1.17
2005-11-23
-60
0.8
1
PIN 3
Unit
A
mJ
kV/µs
V
W
°C
2
VPS05163
S
V
A
3

Related parts for BSP315P

BSP315P Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Avalanche rated Logic Level rated Type Package P-SOT-223 BSP315 P PG-SOT-223 BSP315 P Maximum Ratings, Parameter Continuous drain current ° °C ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V = ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance - MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge -1. Gate to drain charge -1. Gate charge total V = ...

Page 5

Power Dissipation tot A BSP 315 P 1.9 W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area ...

Page 6

Typ. output characteristics parameter µs p BSP 315 P -2 tot -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 ...

Page 7

Drain-source on-resistance DS(on) j parameter -1. BSP 315 P 2.1 1.8 1.6 1.4 1.2 98% 1.0 0.8 typ 0.6 0.4 0.2 0.0 -60 - Typ. capacitances ...

Page 8

Avalanche Energy parameter -1. 105 Drain-source breakdown voltage ...

Page 9

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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