BSP315P-E6327 Infineon Technologies, BSP315P-E6327 Datasheet - Page 7

• Manufacturer Part Number: BSP315P-E6327
• Description: MOSFET P-CH 60V 1.17A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP315P-E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.17A
• Vgs(th) (max) @ Id: 2V @ 160µA
• Gate Charge (qg) @ Vgs: 7.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP315P; BSP315PINTR

Drain-source on-resistance
R
parameter: I
Typ. capacitances
C = f(V
Parameter: V
Rev.1.4
DS(on)
pF
10
10
10
10
2.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-60
3
2
1
0
0
DS
BSP 315 P
= f ( T
)
-5
-20
D
GS
j
= -1.17 A, V
)
-10
=0 V, f =1 MHz
20
98%
-15
typ
-20
60
GS
-25
100
= -10 V
-30
C
C
C
°C
iss
oss
rss
V
T
V
j
DS
180
-40
Page 7
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
-3.0
-3.0
-3.0
-3.0
-2.0
-2.0
-2.0
-2.0
-1.5
-1.5
-1.5
-1.5
-1.0
-1.0
-1.0
-1.0
-0.5
-0.5
-0.5
-0.5
V
V
V
V
A
0.0
0.0
0.0
0.0
-1
-2
-60
-60
-60
-60
0.0
1
0
BSP 315 P
= f ( T j )
SD
-0.4
)
-20
-20
-20
-20
GS
-0.8
p
= V
= 80 µs
20
20
20
20
-1.2
98%
DS
2%
typ
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
, I
-1.6
D
60
60
60
60
= -160 µA
-2.0
BSP 315 P
100
100
100
100
2007-02-08
-2.4
°C
°C
°C
°C
V
V
T
T
T
T
SD
j
j
j
j
-3.0
160
160
160
160