BSP315P L6327 Infineon Technologies, BSP315P L6327 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single BSP315P L6327
Manufacturer Part Number
BSP315P L6327
Description
MOSFET P-CH 60V 1.17A SOT-223
Manufacturer
Infineon Technologies
Specifications of BSP315P L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 1.17A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.17A
Vgs(th) (max) @ Id
2V @ 160µA
Gate Charge (qg) @ Vgs
7.8nC @ 10V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.17 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSP315P L6327 BSP315PL6327INTR BSP315PL6327XT SP000089221
Type
BSP315 P
SIPMOS
Features
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Rev.1.4
Enhancement mode
A
A
A
jmax
A
P-Channel
Avalanche rated
Logic Level
d v /d t rated
= -1.17 A, V
= -1.17 A , V
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 150 °C
Package
PG-SOT-223
Small-Signal-Transistor
DS
DD
= -48 V, d i /d t = 200 A/µs,
= -25 V, R
j
= 25 °C, unless otherwise specified
GS
Tape and Reel Information
L6327: 1000 pcs/reel
= 25
Product Summary
Drain source voltage
Drain-Source on-state resistance R
Continuous drain current
jmax
Pin 1
Page 1
G
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
Pin2/4
j ,
AS
AR
GS
tot
T
D
stg
PIN 3
Marking
BSP315 P
S
-55...+150
55/150/56
V
I
Value
-1.17
-0.94
-4.68
D
0.18
DS
DS(on)
1.8
24
6
20
4
BSP 315 P
-1.17
2007-02-08
-60
0.8
1
Unit
A
mJ
kV/µs
V
W
°C
2
VPS05163
V
A
3
Related parts for BSP315P L6327
BSP315P L6327 Summary of contents
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Avalanche rated Logic Level rated Type Package PG-SOT-223 BSP315 P Maximum Ratings, Parameter Continuous drain current ° °C A Pulsed drain ...
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V = ...
Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance - MHz GS DS Output capacitance ...
Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge -1. Gate to drain charge -1. Gate charge total V = ...
Power Dissipation tot A BSP 315 P 1.9 W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area ...
Typ. output characteristics parameter µs p BSP 315 P -2 tot -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 ...
Drain-source on-resistance DS(on) j parameter -1. BSP 315 P 2.1 1.8 1.6 1.4 1.2 98% 1.0 0.8 typ 0.6 0.4 0.2 0.0 -60 - Typ. capacitances ...
Avalanche Energy parameter -1. 105 Drain-source breakdown voltage ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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