SPW47N60S5 Infineon Technologies, SPW47N60S5 Datasheet - Page 6

• Manufacturer Part Number: SPW47N60S5
• Description: MOSFET N-CH 650V 47A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW47N60S5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5.5V @ 2.7mA
• Gate Charge (qg) @ Vgs: 286nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 415W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW47N60S5IN

Avalanche energy
E
par.: I
Drain-source breakdown voltage
V
AS
(BR)DSS
2000
1600
1400
1200
1000
mJ
800
600
400
200
720
680
660
640
620
600
580
560
540
= f (T
V
D
0
-60
20
=10A, V
SPW47N60S5
j
= f (T
)
40
-20
j
DD
)
60
20
=50V
80
60
100
100
120
°C
°C
T
T
j
j
160
180
Final data
6
Avalanche SOA
I
par.: T
Gate threshold voltage
V
parameter: V
AR
GS(th)
= f (t
A
V
20
10
5
0
7
5
4
3
2
1
0
-60
j
10
= f (T
AR
-3
150 °C
)
10
-20
j
GS
-2
)
T
j (START)
10
= V
20
-1
DS
=125°C
10
, I
0
60
D
10
= 2.7 mA
SPW47N60S5
T
1
j (START)
100
10
2
=25°C
2002-07-26
°C
t
T
µs
AR
max.
typ.
min.
j
180
10
4