SPW47N60S5 Infineon Technologies, SPW47N60S5 Datasheet - Page 2

• Manufacturer Part Number: SPW47N60S5
• Description: MOSFET N-CH 650V 47A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW47N60S5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5.5V @ 2.7mA
• Gate Charge (qg) @ Vgs: 286nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 415W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW47N60S5IN

Electrical Characteristics, at T
Parameter
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
Static Characteristics, at T
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current, V
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
1 current limited by T
D
GS
GS
GS
GS
GS
= 2.7 mA, T
= 0 V, I
= 0 V, T
= 0 V, T
= 20 V, V
= 10 V, I
D
j
j
D
= 25 °C
= 150 °C
= 0.25 mA
DS
j
= 30 A
= 25 °C
jmax
= 0 V
GS
j
= V
= 25 °C, unless otherwise specified
j
DS
= 25 °C, unless otherwise specified
DS
=V
DSS
Final data
2
Symbol
R
R
V
V
I
I
R
DSS
GSS
thJC
thJA
(BR)DSS
GS(th)
DS(on)
min.
600
3.5
-
-
-
-
-
-
Values
0.06
typ.
4.5
0.5
45
-
-
-
-
SPW47N60S5
max.
0.07
250
100
0.3
5.5
25
-
-
2002-07-26
Unit
K/W
V
µA
nA