SPW47N60S5 Infineon Technologies, SPW47N60S5 Datasheet - Page 3

• Manufacturer Part Number: SPW47N60S5
• Description: MOSFET N-CH 650V 47A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW47N60S5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5.5V @ 2.7mA
• Gate Charge (qg) @ Vgs: 286nC @ 10V
• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Power - Max: 415W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW47N60S5IN

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Total gate charge
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct
current,pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
SD
gs
gd
g
rr
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
Final data
D
D
DS
GS
DD
DD
DD
GS
C
GS
R
F
=30A
=47A, R
=25°C
=100V, I
/dt=100A/µs
=0V, V
=350V, V
=350V, I
=350V, I
=0 to 10V
=0V, I
2*I
Conditions
3
D
*R
G
F
DS
F =
=47A
=1.3
DS(on)max
D
D
GS
l
=25V,
=47A
=47A,
S
,
=10V,
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
7600
2900
typ.
360
200
123
220
650
30
27
30
30
56
24
1
SPW47N60S5
-
-
max.
1100 ns
300
286
1.2
2002-07-26
45
47
94
-
-
-
-
-
-
-
-
-
Unit
S
pF
ns
nC
A
V
µC