TPC6101(TE85L) Toshiba, TPC6101(TE85L) Datasheet - Page 5

• Manufacturer Part Number: TPC6101(TE85L)
• Description: MOSFET P-CH 20V 4.5A VS-6
• Manufacturer: Toshiba

Specifications of TPC6101(TE85L)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 830pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-6 (SOT-23-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPC6101(TE12L); TPC6101TR

-0.001
-0.003
-0.03
-0.01
-100
-0.3
-0.1
-30
-10
-3
-1
-0.01 -0.03
*: Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature
I D max (pulse)*
Drain-source voltage V
-0.1
1000
300
100
Safe operating area
0.3
0.1
30
10
0.001
3
1
-0.3
10 ms*
-1
-3
0.01
DS
V DSS
-10
max
(V)
1 ms*
-30
Device mounted on a glass-
epoxy board (b) (Note 2b)
0.1
-100
Pulse t
r
th
5
- t
1
w
w
Device mounted on a glass-
epoxy board (a) (Note 2a)
(s)
10
100
Single pulse
1000
2002-01-17
TPC6101