TPC6101(TE85L) Toshiba, TPC6101(TE85L) Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/6/668/toshiba_sml.jpg)
TPC6101(TE85L)
Manufacturer Part Number
TPC6101(TE85L)
Description
MOSFET P-CH 20V 4.5A VS-6
Manufacturer
Toshiba
Datasheet
1.TPC6101TE85L.pdf
(6 pages)
Specifications of TPC6101(TE85L)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
830pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
VS-6 (SOT-23-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TPC6101(TE12L)
TPC6101TR
TPC6101TR
-0.001
-0.003
-0.03
-0.01
-100
-0.3
-0.1
-30
-10
-3
-1
-0.01 -0.03
*: Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature
I D max (pulse)*
Drain-source voltage V
-0.1
1000
300
100
Safe operating area
0.3
0.1
30
10
0.001
3
1
-0.3
10 ms*
-1
-3
0.01
DS
V DSS
-10
max
(V)
1 ms*
-30
Device mounted on a glass-
epoxy board (b) (Note 2b)
0.1
-100
Pulse t
r
th
5
- t
1
w
w
Device mounted on a glass-
epoxy board (a) (Note 2a)
(s)
10
100
Single pulse
1000
2002-01-17
TPC6101