TPC6101(TE85L) Toshiba, TPC6101(TE85L) Datasheet - Page 2
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TPC6101(TE85L)
Manufacturer Part Number
TPC6101(TE85L)
Description
MOSFET P-CH 20V 4.5A VS-6
Manufacturer
Toshiba
Datasheet
1.TPC6101TE85L.pdf
(6 pages)
Specifications of TPC6101(TE85L)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
830pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
VS-6 (SOT-23-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TPC6101(TE12L)
TPC6101TR
TPC6101TR
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Pulse drain reverse current
Forward voltage (diode)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
Note 3: V
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: Black round marking “·” locates on the left lower side of parts number marking “S3A” indicates terminal
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
No.1.
DD
Characteristics
Characteristics
= 16 V, T
Rise time
Turn-ON time
Fall time
Turn-OFF time
(a)
ch
= 25°C (initial), L = 0.5 mH, R
(Note 1)
(Ta = = = = 25°C)
25.4 ´ 25.4 ´ 0.8
FR-4
Unit: (mm)
V
V
R
R
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
DS (ON)
V
I
I
C
I
|Y
C
C
Q
Q
GSS
DSS
DRP
V
t
t
Q
DSF
on
off
oss
t
t
iss
rss
gs
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
GS
DS
DS
DD
= -10 mA, V
= -10 mA, V
= -4.5 A
GS
G
2
= -4.5 A, V
(Ta = = = = 25°C)
= -20 V, V
= -10 V, I
= -10 V, I
= -10 V, V
~ - -16 V, V
= ±10 V, V
= -2 V, I
= -2.5 V, I
= -4.5 V, I
= 25 W, I
-5 V
0 V
Test Condition
Test Condition
w
D
= 10 ms
D
D
AR
GS
GS
D
D
GS
GS
= -2.2 A
GS
DS
GS
= -200 mA
= -2.2 A
¾
= -2.2 A
= -2.2 A
= 0 V
= 12 V
= 0 V
= -2.25 A
= 0 V
= 0 V
= 0 V, f = 1 MHz
= -5 V,
V
I
D
DD
= -2.2 A
~ - -10 V
(b)
V
OUT
-0.5
-20
Min
Min
4.1
-8
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
25.4 ´ 25.4 ´ 0.8
FR-4
Typ.
Typ.
110
830
300
370
112
Unit: (mm)
8.2
75
48
11
57
12
¾
¾
¾
¾
¾
¾
¾
6
6
6
2002-01-17
TPC6101
Max
-1.2
Max
±10
-10
180
100
-18
1.2
¾
¾
60
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Unit
Unit
mW
mA
mA
pF
nC
ns
V
V
S
A
V