TPC6101 Toshiba Semiconductor, TPC6101 Datasheet

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TPC6101

Manufacturer Part Number
TPC6101
Description
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Manufacturer
Toshiba Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
TPC6101
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
TPC6101TE85L
Manufacturer:
IRISO
Quantity:
4 569
Notebook PC Applications
Portable Equipment Applications
·
·
·
·
Maximum Ratings
Thermal Characteristics
This transistor is an electrostatically sensitive device. Please handle it
with caution.
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Thermal resistance, channel to ambient
(t = 5 s)
Thermal resistance, channel to ambient
(t = 5 s)
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Characteristics
GS
= 20 kW)
I
(Ta = = = = 25°C)
DSS
D
th
DC
Pulse
= −200 µA)
(Note 2a)
(Note 2b)
= −0.5 to −1.2 V (V
(Note 1)
(Note 1)
(Note 4)
(t = 5 s)
(t = 5 s)
= −10 µA (max) (V
(Note 2a)
(Note 2b)
DS (ON)
Symbol
V
fs
V
V
E
E
T
I
I
T
DGR
P
P
GSS
DSS
| = 8.2 S (typ.)
I
DP
AR
AS
AR
stg
D
ch
TPC6101
D
D
= 48 mΩ (typ.)
R
R
Symbol
DS
th (ch-a)
th (ch-a)
DS
= −10 V,
= −20 V)
-55 to 150
Rating
-2.25
-4.5
0.22
-20
-20
±12
-18
150
2.2
0.7
3.3
1
178.5
Max
56.8
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.011 g (typ.)
Circuit Configuration
Marking
JEDEC
JEITA
TOSHIBA
6
1
(Note 5)
S 3 A
2
5
2-3T1A
2002-01-17
TPC6101
4
3
Unit: mm

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TPC6101 Summary of contents

Page 1

... 0. 150 ° -55 to 150 °C stg Symbol Max Unit R 56.8 °C/W th (ch-a) (Note 2a) R 178.5 °C/W th (ch-a) (Note 2b) 1 TPC6101 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Circuit Configuration Marking (Note 2002-01-17 ...

Page 2

... ( 25°C) Symbol Test Condition ¾ I DRP -4 DSF DR GS FR-4 25.4 ´ 25.4 ´ 0.8 Unit: (mm TPC6101 Min Typ. Max = 0 V ¾ ¾ ± ¾ ¾ - -20 ¾ ¾ ¾ ¾ -0.5 ¾ -1.2 ¾ 110 180 ¾ ...

Page 3

... Drain-source voltage V -1 -0.8 -0.6 -0.4 -0 Gate-source voltage V 1000 300 100 30 10 -100 -0.1 -0.3 -1 Drain current I 3 TPC6101 I – Common source Ta = 25°C Pulse test -3 V -2.2 V -2.0 V -1 – Common source Ta = 25°C Pulse test -2 ...

Page 4

... Dynamic input/output characteristics -20 Common source 25°C Pulse test -16 - 160 TPC6101 I – Common source Ta = 25°C Pulse test 0.4 0.6 0.8 1 1.2 Drain-source voltage V ( – Common source -10 V ...

Page 5

... V DSS linearly with increase in max temperature -0.001 -0.01 -0.03 -0.1 -0 -10 Drain-source voltage Device mounted on a glass- epoxy board (b) (Note 2b) Device mounted on a glass- epoxy board (a) (Note 2a) 0 Pulse t ( ms* -30 -100 (V) 5 TPC6101 Single pulse 100 1000 2002-01-17 ...

Page 6

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 TPC6101 000707EAA 2002-01-17 ...

Page 7

... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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