TPC6101(TE85L) Toshiba, TPC6101(TE85L) Datasheet

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... TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Notebook PC Applications Portable Equipment Applications · Low drain-source ON resistance: R High forward transfer admittance: |Y · Low leakage current −10 µA (max) (V · DSS Enhancement-model −0.5 to −1 · −200 µ 25°C) Maximum Ratings ...

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Electrical Characteristics Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate ...

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I – Common source - 25°C Pulse test -4 V -2.5 V -2 -1 -1.4 V ...

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R – (ON) 180 Common source 160 -2.2 A Pulse test 140 -1.1 A 120 100 -2 -2 -2.2 A -2 -4.5 ...

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Safe operating area -100 I D max (pulse)* -30 - -0.3 -0.1 -0.03 -0.01 *: Single pulse Ta = 25°C Curves must be derated -0.003 ...

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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...