IRF3711 International Rectifier, IRF3711 Datasheet - Page 7
![MOSFET N-CH 20V 110A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF3711
Manufacturer Part Number
IRF3711
Description
MOSFET N-CH 20V 110A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3711S.pdf
(12 pages)
Specifications of IRF3711
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 4.5V
Input Capacitance (ciss) @ Vds
2980pF @ 10V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3711
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF3711
Manufacturer:
IR
Quantity:
33 900
Company:
Part Number:
IRF3711
Manufacturer:
GMAMA
Quantity:
25 000
Company:
Part Number:
IRF3711S
Manufacturer:
IR
Quantity:
30 000
Company:
Part Number:
IRF3711SPBF
Manufacturer:
MAXM
Quantity:
5 707
Part Number:
IRF3711STRL
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF3711STRRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF3711TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF3711Z
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
D.U.T
*
Fig 14. For N-Channel HEXFET
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
IRF3711/3711S/3711L
®
D =
-
Power MOSFETs
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
*
7