IRF3711 International Rectifier, IRF3711 Datasheet - Page 4

• Manufacturer Part Number: IRF3711
• Description: MOSFET N-CH 20V 110A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3711

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2980pF @ 10V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3711

IRF3711/3711S/3711L
4
1000
100000
100
10000
0.1
10
1000
1
100
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
T = 150 C
J
1
Drain-to-Source Voltage
V
SD
°
V DS , Drain-to-Source Voltage (V)
0.8
,Source-to-Drain Voltage (V)
Forward Voltage
T = 25 C
J
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
Coss
Crss
Ciss
°
1.4
10
f = 1 MHZ
2.0
V
GS
SHORTED
= 0 V
2.6
100
10000
1000
100
10
Fig 8. Maximum Safe Operating Area
14
12
10
1
8
6
4
2
0
0
Fig 6. Typical Gate Charge Vs.
1
I =
D
Tc = 25°C
Tj = 150°C
Single Pulse
30A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
DS
DS
= 16V
= 10V
40
10
FOR TEST CIRCUIT
SEE FIGURE
www.irf.com
100µsec
1msec
10msec
60
13
100
80