IRF3711 International Rectifier, IRF3711 Datasheet - Page 6
![MOSFET N-CH 20V 110A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF3711
Manufacturer Part Number
IRF3711
Description
MOSFET N-CH 20V 110A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3711S.pdf
(12 pages)
Specifications of IRF3711
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 4.5V
Input Capacitance (ciss) @ Vds
2980pF @ 10V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3711
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IRF3711/3711S/3711L
Fig 13a. Basic Gate Charge Waveform
Fig 12a. Unclamped Inductive Test Circuit
V
6
Fig 12b. Unclamped Inductive Waveforms
GS
V
I
G
AS
Q
GS
R G
20V
V DS
t p
Charge
Q
Q
GD
G
t p
I AS
D.U.T
0.01 Ω
L
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
1400
1200
1000
800
600
400
200
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
12V
V
GS
50
Same Type as D.U.T.
Current Regulator
.2µF
J
Vs. Drain Current
75
50KΩ
3mA
Current Sampling Resistors
.3µF
I
G
100
TOP
BOTTOM
www.irf.com
D.U.T.
I
D
125
°
+
I D
-
13A
19A
30A
V
DS
150