IRF3711 International Rectifier, IRF3711 Datasheet - Page 2

• Manufacturer Part Number: IRF3711
• Description: MOSFET N-CH 20V 110A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3711

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2980pF @ 10V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3711

IRF3711/3711S/3711L
Diode Characteristics
Avalanche Characteristics
Dynamic @ T
Static @ T
t
Symbol
E
I
V
V
∆V
R
V
Symbol
g
Q
Q
Q
Q
Rg
t
t
t
C
C
C
Symbol
I
I
t
Q
t
Q
I
d(on)
AR
I
d(off)
S
SM
rr
rr
DSS
r
f
GSS
fs
AS
2
SD
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
oss
rr
rr
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Leakage Current
Static Drain-to-Source On-Resistance
Diode Forward Voltage
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
0.3
Min. Typ. Max. Units
20
53
–––
–––
––– 0.88
––– 0.82
–––
–––
–––
–––
0.022
2980 –––
1770 –––
–––
–––
–––
–––
–––
––– -200
–––
–––
220
280
–––
–––
4.7
6.2
7.3
8.9
29
33
12
17
12
50
61
48
65
110
440
–––
100
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
2.5
1.3
–––
20
44
75
92
72
98
6.0
8.5
†
mΩ
ns
µA
nA
nC
nC
nC
V/°C
pF
ns
ns
V
V
S
Ω
V
Typ.
–––
–––
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
di/dt = 100A/µs ƒ
T
di/dt = 100A/µs ƒ
I
D
D
Reference to 25°C, I
J
J
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
G
GS
GS
DS
= 30A
= 15A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8Ω
= V
= 16V, V
= 16V, V
= 16V, I
= 10V
= 10V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V
= 0V, V
= 10V
= 4.5V ƒ
= 0V
GS
, I
D
S
F
DS
D
D
D
Conditions
S
F
= 250µA
D
GS
GS
Conditions
= 30A, V
= 16A, V
Conditions
= 250µA
= 15A
= 30A
= 10V
= 30A, V
= 16A, V
= 12A
Max.
460
= 0V, T
= 0V
30
www.irf.com
D
GS
R
ƒ
ƒ
= 1mA
=10V
GS
R
J
=10V
= 125°C
= 0V ƒ
G
= 0V ƒ
Units
mJ
A
D
S