IRF5803D2 International Rectifier, IRF5803D2 Datasheet - Page 9

• Manufacturer Part Number: IRF5803D2
• Description: MOSFET P-CH 40V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF5803D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Note (4) Formula used: T
Pd = Forward Power Loss = I
Pd
www.irf.com
REV
= Inverse Power Loss = V
0.01
100
0.1
10
0.00001
1
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01

(THERMAL RESPONSE)
0.0001
C
SINGLE PULSE
= T
F(AV)
J
- (Pd + Pd
180
160
140
120
100
80
60
40
20
R1
0
x V
Schottky Diode Characteristics
x I
0
Fig.21 - Maximum Allowable Ambient
S
80 % Rated V R applied
0.001
FM
R
see note (4)
quare wave ( D = 0.50)
(1 - D); I
@ (I
REV
Average Forward Current - I F(AV) (A)
Temp. Vs. Forward Current
t , Rectangular Pulse Duration (sec)
1
1
) x R
F(AV)
DC
R
@ V
thJA
/
0.01
2
D) ;
;
R1
= 80% rated V
3
R thJA = 62.5 °C/W
0.1
4

R
1. Duty factor D =t / t
2. Peak T = P
Notes:
5
1
J
6
DM
x Z
1

thJA
P
2
DM
+ T
10
IRF5803D2
A
t
1
t
2
100
9