IRF5803D2 International Rectifier, IRF5803D2 Datasheet - Page 3
IRF5803D2
Manufacturer Part Number
IRF5803D2
Description
MOSFET P-CH 40V 3.4A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF5803D2.pdf
(11 pages)
Specifications of IRF5803D2
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
112 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
37nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
www.irf.com
0.01
100
0.1
100
10
0.1
10
1
1
Fig 3. Typical Transfer Characteristics
0.1
2.0
Fig 1. Typical Output Characteristics
-V
3.0
-V DS , Drain-to-Source Voltage (V)
GS
, Gate-to-Source Voltage (V)
4.0
1
-2.7V
5.0
T = 25 C
J
20µs PULSE WIDTH
Tj = 25°C
V
20µs PULSE WIDTH
DS
°
6.0
10
Power Mosfet Characteristics
= -25V
T = 150 C
J
TOP
BOTTOM - 2.7V
7.0
°
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-15V
VGS
100
8.0
0.01
100
0.1
2.0
1.5
1.0
0.5
0.0
10
1
Fig 2. Typical Output Characteristics
-60 -40 -20
0.1
I =
D
Fig 4. Normalized On-Resistance
-3.4A
T , Junction Temperature ( C)
-V DS , Drain-to-Source Voltage (V)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
-2.7V
IRF5803D2
20µs PULSE WIDTH
Tj = 125°C
10
V
TOP
BOTTOM - 2.7V
GS
°
=
-10V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-
-15V
VGS
3
100