IRF5803D2 International Rectifier, IRF5803D2 Datasheet - Page 2

• Manufacturer Part Number: IRF5803D2
• Description: MOSFET P-CH 40V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF5803D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

MOSFET Source-Drain Ratings and Characteristics
IRF5803D2
Electrical Characteristics @ T
Vfm
Schottky Diode Electrical Specifications
Schottky Diode Maximum Ratings
Ct
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
If (av)
Vrrm
Irm
I
S
R
I
SM
rr
d(on)
r
d(off)
I
f
SM
DSS
V
fs
GSS
SD
(BR)DSS
GS(th)
iss
rss
rr
oss
g
gs
gd
DS(on)
2
(BR)DSS
/ T
J
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Max. Junction Capacitance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Forward Voltage Drop
Max. Working Peak Reverse Voltage
Max. Reverse Leakage Current
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Max. Units
Max. Units
Min. Typ. Max. Units
–––
–––
0.63
0.59
-1.0
–––
–––
0.51
0.44
405
––– -0.03 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1110 –––
–––
–––
340
-40
4.0
3.0
3.0
40
37
70
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
550
mA
4.5
3.5
27
34
25
43
88
50
93
73
pF
A
V
A
V
-2.0
-1.2
112
-3.0
100
–––
–––
825
130
–––
–––
-27
-10
190
-25
6.8
5.3
40
50
37
65
75
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
50% Duty Cycle. Rectangular Waveform, T
5µs sine or 3µs Rect. pulse
If = 5.0A, Tj = 25°C
If = 10A, Tj = 25°C
If = 5.0A, Tj = 125°C
If = 10A, Tj = 125°C
Vr = 40V
10ms sine or 6ms Rect. pulse load condition &
See Fig.21
V/°C
m
µA
nA
nC
nC
ns
ns
pF
V
V
V
S
A
T
T
di/dt = 100A/µs ‚
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 100kHz, See Fig. 5
Conditions
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
= -3.4A
= -1.0A
= 25°C, I
= 25°C, I
Tj = 25°C
Tj = 125°C
= 6.0
= V
= -10V, I
= -32V, V
= -32V, V
= -20V
= 20V
= -20V
= -20V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -10V, See Fig. 6 & 14 ‚
= -10V, ‚
= 0V
Conditions
GS
Conditions
, I
D
S
F
D
= -250µA
D
= -2.0A
D
Conditions
= -2.0A, V
D
GS
= -250µA
GS
= -3.4A
= -3.4A ‚
= -2.7A ‚
= 0V
= 0V, T
Following any rated
with Vrrm applied
D
www.irf.com
= -1mA
GS
J
= 70°C
= 0V
A
=30°C