IRF5803D2 International Rectifier, IRF5803D2 Datasheet - Page 8

• Manufacturer Part Number: IRF5803D2
• Description: MOSFET P-CH 40V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF5803D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF5803D2
8
1 00
Fig. 17 - Maximum Forward Voltage Drop
10
1
0
0 .2 0 . 4 0 .6 0 .8
Fo rw ard V o lta g e D ro p - V
Characteristics
1
1 .2 1 .4 1. 6 1 .8
T = 15 0°C
T = 12 5°C
T = 2 5°C
Schottky Diode Characteristics
J
J
J
F M
(V )
2
2 .2
0 .0 0 1
1 0 0 0
Reverse Current Vs. Reverse Voltage
0 . 0 1
10 0
1 0 0
0 .1
Fig. 19 - Typical Junction Capacitance
1 0
1
0
0
Fig. 18 - Typical Values of
T = 15 0°C
J
5
5
Vs. Reverse Voltage
1 00°C
125 °C
50 °C
75°C
25°C
10
Reverse V oltag e - V
Reverse V oltage - V (V )
1 0
15
1 5
T = 25°C
2 0
J
2 0
25
2 5
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30
R
R
3 0
(V )
3 5
3 5
4 0
4 0
4 5