BUK9506-55A,127 NXP Semiconductors, BUK9506-55A,127 Datasheet - Page 13

MOSFET N-CH 55V 75A SOT78

BUK9506-55A,127

Manufacturer Part Number
BUK9506-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9506-55A,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
8600pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0058 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
154 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
235 ns
Minimum Operating Temperature
- 55 C
Rise Time
180 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
 Details
Other names
934055408127
BUK9506-55A
BUK9506-55A
11. Revision history
Table 6:
Philips Semiconductors
9397 750 08416
Product data
Rev Date
03
02
01
20010723
19991202
19981011
Revision history
CPCN
-
-
-
Description
Product data; third version. Data sheet updated to Data Builder Two format, with the
addition of SOT226 part.
Product Specification; second version
Product Specification; initial version
Rev. 03 — 23 July 2001
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
© Philips Electronics N.V. 2001. All rights reserved.
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