IRF9520S Vishay, IRF9520S Datasheet - Page 6

• Manufacturer Part Number: IRF9520S
• Description: MOSFET P-CH 100V 6.8A D2PAK
• Manufacturer: Vishay

Specifications of IRF9520S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520S

IRF9520S, SiHF9520S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91075_12c
1000
400
800
600
200
0
25
V
DD
Starting T
+
-
= - 25 V
V
50
DD
J
, Junction Temperature (°C)
75
100
125
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
150
V
Fig. 13b - Gate Charge Test Circuit
- 2.8 A
- 4.8 A
- 6.8 A
GS
Same type as D.U.T.
I
Current regulator
D
175
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S09-0017-Rev. A, 19-Jan-09
Document Number: 91075
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD