IRF9520S Vishay, IRF9520S Datasheet - Page 2

• Manufacturer Part Number: IRF9520S
• Description: MOSFET P-CH 100V 6.8A D2PAK
• Manufacturer: Vishay

Specifications of IRF9520S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520S

IRF9520S, SiHF9520S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
V
V
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
V
R
= 25 °C, I
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
G
Reference to 25 °C, I
= - 10 V
= - 10 V
= 25 °C, I
= 18 Ω, R
= - 80 V, V
V
V
V
V
V
DS
DD
f = 1.0 MHz, see fig. 5
DS
DS
TYP.
GS
TEST CONDITIONS
-
-
-
= - 50 V, I
= - 50 V, I
= - 100 V, V
F
= V
= 0 V, I
V
V
= - 6.8 A, dI/dt = 100 A/µs
V
GS
DS
S
I
GS
D
D
GS
= - 6.8 A, V
GS
= 7.1 Ω, see fig. 10
= - 6.8 A, V
, I
= ± 20 V
= - 25 V,
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 µA
D
D
= - 250 µA
I
D
= - 4.1 A
= - 6.8 A,
GS
= - 4.1 A
D
= 0 V
= - 1 mA
J
GS
DS
G
= 150 °C
G
= 0 V
b
= - 80 V,
b
MAX.
D
S
b
b
b
D
S
2.5
62
40
b
- 100
MIN.
- 2.0
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0017-Rev. A, 19-Jan-09
Document Number: 91075
TYP.
- 0.1
0.33
390
170
9.6
4.5
7.5
45
29
21
25
98
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
- 100
- 500
- 4.0
0.60
- 6.8
- 6.3
0.66
S
- 27
200
3.0
9.0
18
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V