IRF9520S Vishay, IRF9520S Datasheet

MOSFET P-CH 100V 6.8A D2PAK

IRF9520S

Manufacturer Part Number
IRF9520S
Description
MOSFET P-CH 100V 6.8A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF9520S

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9520S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9520S
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRF9520S
Manufacturer:
IR
Quantity:
12 500
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91075
S09-0017-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
G D
(nC)
(nC)
(V)
≤ - 6.8 A, dI/dt ≤ 110 A/µs, V
= - 25 V, starting T
D
(Ω)
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 9.7 mH, R
c
a
V
b
GS
DD
D
IRF9520SPbF
SiHF9520S-E3
IRF9520S
SiHF9520S
= - 10 V
e
≤ V
2
G
PAK (TO-263)
DS
P-Channel MOSFET
, T
e
Single
- 100
J
3.0
9.0
18
≤ 175 °C.
G
S
D
= 25 Ω, I
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.60
GS
at - 10 V
AS
= - 6.8 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF9520STRLPbF
SiHF9520STL-E3
IRF9520STRL
SiHF9520STL
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
SYMBOL
a
a
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
a
I
DM
AR
DS
GS
AS
AR
a
D
D
stg
IRF9520S, SiHF9520S
design,
- 55 to + 175
D
IRF9520STRRPbF
SiHF9520STR-E3
-
-
2
LIMIT
0.025
- 100
300
PAK (TO-263)
± 20
- 6.8
- 4.8
0.40
- 6.8
- 5.5
- 27
300
6.0
3.7
60
low
Vishay Siliconix
d
on-resistance
www.vishay.com
a
a
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRF9520S Summary of contents

Page 1

... IRF9520STRLPbF SiHF9520STL-E3 IRF9520STRL SiHF9520STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 6.8 A (see fig. 12 ≤ 175 ° IRF9520S, SiHF9520S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF9520STRRPbF a a SiHF9520STR- SYMBOL LIMIT V - 100 DS V ± 6 4.8 ...

Page 2

... IRF9520S, SiHF9520S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 91075 S09-0017-Rev. A, 19-Jan- µs Pulse Width ° 91075_03 = 25 ° 4 µs Pulse Width T = 175 ° 91075_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF9520S, SiHF9520S Vishay Siliconix ° ° 175 C 20 µs Pulse Width Gate-to-Source Voltage ( Fig ...

Page 4

... IRF9520S, SiHF9520S Vishay Siliconix 900 MHz iss gs 750 rss oss ds 600 450 300 150 Drain-to-Source Voltage ( 91075_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 6 Total Gate Charge (nC) 91075_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91075_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91075 S09-0017-Rev. A, 19-Jan-09 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF9520S, SiHF9520S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF9520S, SiHF9520S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 1000 Top 800 Bottom 600 400 200 100 ...

Page 7

... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRF9520S, SiHF9520S Vishay Siliconix + + P. www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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