IRF9520S Vishay, IRF9520S Datasheet - Page 3

• Manufacturer Part Number: IRF9520S
• Description: MOSFET P-CH 100V 6.8A D2PAK
• Manufacturer: Vishay

Specifications of IRF9520S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520S

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91075
S09-0017-Rev. A, 19-Jan-09
91075_02
91075_01
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
1
0
10
10
Top
Bottom
0
0
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS ,
DS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
Top
Bottom
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 10 V
- 15 V
V
GS
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
175 °C
C
C
- 4.5 V
- 4.5 V
= 175 °C
= 25 °C
91075_03
91075_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
- 60- 40 - 20 0
Fig. 3 - Typical Transfer Characteristics
4
I
V
D
GS
= - 6.8 A
IRF9520S, SiHF9520S
- V
= - 10 V
5
T
GS ,
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
6
175
25
°
C
7
°
C
Vishay Siliconix
20 µs Pulse Width
V
DS
8
= -
50 V
www.vishay.com
9
10
3