IPB160N04S2-03 Infineon Technologies, IPB160N04S2-03 Datasheet - Page 6

• Manufacturer Part Number: IPB160N04S2-03
• Description: MOSFET N-CH 40V 160A TO263-7
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB160N04S2-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (7 leads + tab)
• Configuration: Single Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.9 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218151

Rev. 1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10000
1000
100
DS
=f(T
5
4
3
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=80 A; V
5
20
10
GS
V
=10 V
T
DS
j
15
60
[°C]
Coss
[V]
Crss
100
20
Ciss
140
25
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typ. Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
3.5
2.5
1.5
10
=f(T
SD
4
3
2
1
-60
0.0
)
j
); V
D
j
GS
-20
=V
DS
175 °C
0.5
20
250µA
V
T
SD
j
60
[°C]
[V]
1000µA
25 °C
IPB160N04S2-03
100
1.0
140
2006-03-02
180
1.5