IPB160N04S2-03 Infineon Technologies, IPB160N04S2-03 Datasheet - Page 6
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IPB160N04S2-03
Manufacturer Part Number
IPB160N04S2-03
Description
MOSFET N-CH 40V 160A TO263-7
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB160N04S2-03.pdf
(8 pages)
Specifications of IPB160N04S2-03
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.9 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (7 leads + tab)
Configuration
Single Quad Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.9 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
160 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000218151
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB160N04S2-03
Manufacturer:
INF
Quantity:
783
Company:
Part Number:
IPB160N04S2-03
Manufacturer:
INFINEON
Quantity:
3 550
Part Number:
IPB160N04S2-03
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10000
1000
100
DS
=f(T
5
4
3
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=80 A; V
5
20
10
GS
V
=10 V
T
DS
j
15
60
[°C]
Coss
[V]
Crss
100
20
Ciss
140
25
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typ. Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
3.5
2.5
1.5
10
=f(T
SD
4
3
2
1
-60
0.0
)
j
); V
D
j
GS
-20
=V
DS
175 °C
0.5
20
250µA
V
T
SD
j
60
[°C]
[V]
1000µA
25 °C
IPB160N04S2-03
100
1.0
140
2006-03-02
180
1.5