IPB160N04S2-03 Infineon Technologies, IPB160N04S2-03 Datasheet - Page 4
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IPB160N04S2-03
Manufacturer Part Number
IPB160N04S2-03
Description
MOSFET N-CH 40V 160A TO263-7
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB160N04S2-03.pdf
(8 pages)
Specifications of IPB160N04S2-03
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.9 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (7 leads + tab)
Configuration
Single Quad Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.9 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
160 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000218151
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB160N04S2-03
Manufacturer:
INF
Quantity:
783
Company:
Part Number:
IPB160N04S2-03
Manufacturer:
INFINEON
Quantity:
3 550
Part Number:
IPB160N04S2-03
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
320
280
240
200
160
120
100
80
40
10
DS
0
1
C
0.1
0
); T
)
limited by on-state
resistance
C
p
=25 °C; D =0
50
1
T
V
C
DS
100
[°C]
[V]
100 µs
1 ms
10 µs
10
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.001
0.01
160
140
120
100
=f(t
0.1
80
60
40
20
C
0
1
); V
10
p
0
0
)
-6
0.5
0.2
0.05
0.02
0.01
0.1
single pulse
GS
≥10 V
10
p
0
/T
-5
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
IPB160N04S2-03
10
0
-2
150
10
2006-03-02
0
-1
200
10
1
0