IPB160N04S2-03 Infineon Technologies, IPB160N04S2-03 Datasheet - Page 4

• Manufacturer Part Number: IPB160N04S2-03
• Description: MOSFET N-CH 40V 160A TO263-7
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB160N04S2-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (7 leads + tab)
• Configuration: Single Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.9 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218151

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
320
280
240
200
160
120
100
80
40
10
DS
0
1
C
0.1
0
); T
)
limited by on-state
resistance
C
p
=25 °C; D =0
50
1
T
V
C
DS
100
[°C]
[V]
100 µs
1 ms
10 µs
10
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.001
0.01
160
140
120
100
=f(t
0.1
80
60
40
20
C
0
1
); V
10
p
0
0
)
-6
0.5
0.2
0.05
0.02
0.01
0.1
single pulse
GS
≥10 V
10
p
0
/T
-5
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
IPB160N04S2-03
10
0
-2
150
10
2006-03-02
0
-1
200
10
1
0