IPB160N04S2-03 Infineon Technologies, IPB160N04S2-03 Datasheet - Page 5

• Manufacturer Part Number: IPB160N04S2-03
• Description: MOSFET N-CH 40V 160A TO263-7
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB160N04S2-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (7 leads + tab)
• Configuration: Single Quad Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.9 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218151

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
300
250
200
150
100
320
280
240
200
160
120
50
80
40
DS
GS
0
0
); T
0
2
); |V
j
=25 °C
10.0V
DS
GS
j
|>2|I
3
D
175°C
|R
7.0V
1
DS(on)max
4
V
V
GS
DS
[V]
[V]
6.5V
25°C
5
2
5.0V
6
6.0V
5.5V
3
7
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
300
250
200
150
100
10
50
8
6
4
2
0
D
=f(I
0
); T
0
0
D
j
); T
=25 °C
GS
j
=25 °C
20
80
40
5.5V
I
I
D
D
160
[A]
[A]
6.0V
60
IPB160N04S2-03
7.0V
240
80
10.0V
2006-03-02
100
320