IPB160N04S2-03 Infineon Technologies, IPB160N04S2-03 Datasheet - Page 5
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IPB160N04S2-03
Manufacturer Part Number
IPB160N04S2-03
Description
MOSFET N-CH 40V 160A TO263-7
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB160N04S2-03.pdf
(8 pages)
Specifications of IPB160N04S2-03
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.9 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (7 leads + tab)
Configuration
Single Quad Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.9 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
160 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000218151
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB160N04S2-03
Manufacturer:
INF
Quantity:
783
Company:
Part Number:
IPB160N04S2-03
Manufacturer:
INFINEON
Quantity:
3 550
Part Number:
IPB160N04S2-03
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
300
250
200
150
100
320
280
240
200
160
120
50
80
40
DS
GS
0
0
); T
0
2
); |V
j
=25 °C
10.0V
DS
GS
j
|>2|I
3
D
175°C
|R
7.0V
1
DS(on)max
4
V
V
GS
DS
[V]
[V]
6.5V
25°C
5
2
5.0V
6
6.0V
5.5V
3
7
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
300
250
200
150
100
10
50
8
6
4
2
0
D
=f(I
0
); T
0
0
D
j
); T
=25 °C
GS
j
=25 °C
20
80
40
5.5V
I
I
D
D
160
[A]
[A]
6.0V
60
IPB160N04S2-03
7.0V
240
80
10.0V
2006-03-02
100
320