IPP50R199CP Infineon Technologies, IPP50R199CP Datasheet - Page 6

• Manufacturer Part Number: IPP50R199CP
• Description: MOSFET N-CH 550V 17A TO-220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP50R199CP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.5V @ 660µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 100V
• Power - Max: 139W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 550V
• On Resistance Rds(on): 199mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.199 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 139 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000236074

Rev. 2.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
500
400
300
200
100
10
9
8
7
6
5
4
3
2
1
0
0
25
j
0
); I
gate
D
); I
=6.6 A; V
DD
D
=9.9 A pulsed
10
75
DD
=50 V
Q
T
gate
j
20
[°C]
[nC]
400 V
120 V
125
30
175
page 6
40
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
10
580
560
540
520
500
480
460
440
10
10
10
SD
-1
2
1
0
-60
=f(T
)
0
j
); I
j
-20
D
=0.25 mA
0.5
150 °C
20
V
T
SD
j
60
[°C]
1
25 °C
[V]
100
IPP50R199CP
1.5
140
25 °C, 98%
150 °C, 98%
2007-11-06
180
2