IPP50R199CP Infineon Technologies, IPP50R199CP Datasheet - Page 4

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IPP50R199CP

Manufacturer Part Number
IPP50R199CP
Description
MOSFET N-CH 550V 17A TO-220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPP50R199CP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 9.9A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
3.5V @ 660µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 100V
Power - Max
139W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
550V
On Resistance Rds(on)
199mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.199 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A
Power Dissipation
139 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000236074

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP50R199CP
Manufacturer:
Infineon
Quantity:
500
Part Number:
IPP50R199CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IPP50R199CP-S
Quantity:
5 000
Part Number:
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Manufacturer:
RICOH
Quantity:
3 359
Part Number:
IPP50R199CPXKSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.0
1 Power dissipation
P
3 Max. transient thermal impedance
Z
parameter: D=t
(thJC)
tot
=f(T
150
125
100
10
10
=f(t
10
75
50
25
0
-1
-2
0
C
10
0
p
)
);
-5
0.02
0.05
0.01
single pulse
0.1
0.5
0.2
25
p
/T
10
50
-4
75
T
t
C
10
p
[°C]
[s]
-3
100
125
10
-2
150
10
175
page 4
-1
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: V
D
D
=f(V
=f(V
10
10
10
10
60
50
40
30
20
10
DS
DS
0
-1
2
1
0
10
0
); T
); T
0
C
p
j
=25 °C
GS
=25 °C; D =0
limited by on-state
resistance
5
10
1
V
V
DS
DS
10
DC
[V]
[V]
8 V
10
6 V
10 V
5.5 V
5 V
4.5 V
10 ms
IPP50R199CP
2
1 ms
15
100 µs
10 µs
7 V
20 V
1 µs
2007-11-06
10
20
3

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