IPP50R199CP Infineon Technologies, IPP50R199CP Datasheet

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IPP50R199CP

Manufacturer Part Number
IPP50R199CP
Description
MOSFET N-CH 550V 17A TO-220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPP50R199CP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 9.9A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
3.5V @ 660µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 100V
Power - Max
139W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
550V
On Resistance Rds(on)
199mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.199 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A
Power Dissipation
139 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000236074

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP50R199CP
Manufacturer:
Infineon
Quantity:
500
Part Number:
IPP50R199CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IPP50R199CP-S
Quantity:
5 000
Part Number:
IPP50R199CPXK
Manufacturer:
RICOH
Quantity:
3 359
Part Number:
IPP50R199CPXKSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.0
Features
• Lowest figure-of -merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebook adapter and PDP and LCD TV
• PWM for ATX, Notebook adapter, PDP & LCD TV
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
IPP50R199CP
TM
Power Transistor
2)
j
Package
PG-TO220
=25 °C, unless otherwise specified
ON
x Q
AR
AR
1)
2),3)
2),3)
g
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
Marking
5R199P
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=6.6 A, V
=6.6 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...400 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
@T
jmax
-55 ... 150
Value
0.66
436
±20
±30
139
6.6
17
11
40
50
60
PG-TO220
IPP50R199CP
0.199 Ω
550
34
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2007-11-06

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IPP50R199CP Summary of contents

Page 1

... Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse =6 = 2 2), =0...400 static >1 Hz =25 °C tot stg M3 and M3.5 screws page 1 IPP50R199CP @T 550 jmax 0.199 Ω 34 PG-TO220 Value Unit 436 mJ 0.66 6 V/ns ±20 V ±30 139 W -55 ... 150 °C 60 Ncm V nC 2007-11-06 ...

Page 2

... GS(th =500 DSS T =25 ° =500 =150 ° = GSS = =9 DS(on) T =25 ° = =9 =150 ° MHz, open drain G page 2 IPP50R199CP Value Unit 9 V/ns Values Unit min. typ. max 0.9 K 260 °C 500 - - V 2 µ 100 nA 0.199 Ω - 0.18 - 0.45 - Ω - 2.2 ...

Page 3

... D t =16.4 Ω R d(off =400 plateau =9 =25 ° =400 /dt =100 A/µ rrm =400V, V < <T , identical low and high side switch peak (BR)DSS j jmax oss oss page 3 IPP50R199CP Values min. typ. max. - 1800 - - 160 - - 5 0.9 1.2 - 340 - , * while V is rising from DSS ...

Page 4

... D 0.5 0.2 0 0.05 0.02 0.01 single pulse - Rev. 2.0 2 Safe operating area I =f parameter 100 125 150 175 10 [° Typ. output characteristics I =f parameter [s] p page 4 IPP50R199CP ); T =25 ° limited by on-state 10 µs resistance 100 µ [ =25 ° µ 2007-11-06 ...

Page 5

... T Rev. 2.0 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 0.8 5 0.4 4 Typ. transfer characteristics I =f parameter typ 100 140 180 0 [°C] j page 5 IPP50R199CP ); T =150 ° 6 5 [A] D |>2 DS(on)max j 25 °C 150 ° [ 2007-11-06 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 120 400 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 580 560 540 520 500 480 460 440 125 175 -60 [°C] j page 6 IPP50R199CP j 25 °C, 98% 150 °C, 98% 25 °C 150 °C 0.5 1 1 =0. - 100 140 T [° 180 2007-11-06 ...

Page 7

... Typ. capacitances C =f MHz Ciss 3 10 Coss Crss 100 200 V Rev. 2.0 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 IPP50R199CP ) 100 200 300 400 V [V] DS 500 2007-11-06 ...

Page 8

... Definition of diode switching characteristics Rev. 2.0 page 8 IPP50R199CP 2007-11-06 ...

Page 9

... PG-TO220-3-1/TO220-3-21: Outline Rev. 2.0 page 9 IPP50R199CP 2007-11-06 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 IPP50R199CP 2007-11-06 ...

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