IPB022N04L G Infineon Technologies, IPB022N04L G Datasheet

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IPB022N04L G

Manufacturer Part Number
IPB022N04L G
Description
MOSFET N-CH 40V 90A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB022N04L G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.2 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
2V @ 95µA
Gate Charge (qg) @ Vgs
166nC @ 10V
Input Capacitance (ciss) @ Vds
13000pF @ 20V
Power - Max
167W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
1.8mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0022 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
167 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000391497
Rev. 1.2
1)
Type
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
Type
Package
Marking
J-STD20 and JESD22
3 Power-Transistor
IPB022N04L G
PG-TO263-3
022N04L
2)
j
=25 ° C, unless otherwise specified
DS(on)
DS(on)
1)
3)
product (FOM)
for target applications
Symbol Conditions
I
I
I
E
V
D
D,pulse
AS
AS
GS
V
V
V
V
T
T
T
I
D
page 1
C
C
C
GS
GS
GS
GS
=90 A, R
=100 ° C
=25 °C
=25 °C
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V,
GS
C
C
=25 W
Product Summary
V
R
I
C
=25 ° C
=100 ° C
D
=25 ° C
DS
DS(on),max
Value
400
150
±20
90
90
90
90
90
IPB022N04L G
2.2
40
90
Unit
A
mJ
V
V
mW
A
2009-12-11

Related parts for IPB022N04L G

IPB022N04L G Summary of contents

Page 1

... Gate source voltage 1) J-STD20 and JESD22 Rev. 1.2 1) for target applications product (FOM) DS(on) DS(on) Symbol Conditions =100 ° =25 °C D,pulse =25 ° = page 1 IPB022N04L G Product Summary DS(on),max I D Value =25 ° =100 ° =25 ° 400 90 =25 W 150 ± 2 Unit 2009-12-11 ...

Page 2

... C, unless otherwise specified (BR)DSS =95 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 =90 A DS( |>2 DS(on)max = page 2 IPB022N04L G Value 167 -55 ... 175 55/175/56 Values min. typ. max 100 - 10 100 - 2.3 2.9 - 1.8 2 110 220 - Unit W ° C Unit K/W V µ 2009-12-11 ...

Page 3

... See figure 16 for gate charge parameter definition Rev. 1.2 Symbol Conditions C iss oss f =1 MHz C rss t d( d(off g(th = plateau g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPB022N04L G Values min. typ. max. - 9900 13000 pF = 2000 2700 - 120 - = = 125 166 - 2.9 = 117 = 400 - 0.89 1 Unit - - 2009-12-11 ...

Page 4

... Rev. 1.2 2 Drain current I =f(T D 100 100 150 200 T [° Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 100 µ [V] DS page 4 IPB022N04L 100 T [° 0.5 0.2 -1 0.1 0.05 0.02 0.01 -2 single pulse - [s] p 150 200 - ...

Page 5

... Rev. 1.2 6 Typ. drain-source on resistance R DS(on) parameter 3 Typ. forward transconductance g =f ° [V] GS page 5 IPB022N04L G =f =25 ° 3 3 120 I [ =25 ° 320 280 240 200 160 120 100 150 I [ ...

Page 6

... Rev. 1.2 10 Typ. gate threshold voltage = GS(th) typ 60 100 140 180 T [° Forward characteristics of reverse diode I =f(V F parameter: T 1000 Ciss 100 Coss Crss [V] DS page 6 IPB022N04L G =250 mA =f 2.5 2 1.5 1 0.5 0 -60 - 100 T [° ° C 175 ° 0.0 0.5 1.0 V [V] ...

Page 7

... Drain-source breakdown voltage V =f BR(DSS -60 -20 20 Rev. 1.2 14 Typ. gate charge V =f(Q GS parameter ° C 100 ° C 150 ° [µ Gate charge waveforms 60 100 140 180 T [° page 7 IPB022N04L =30 A pulsed gate [nC] gate s(th (th 120 160 Q g ate 2009-12-11 ...

Page 8

... Package Outline Footprint: Rev. 0.1 target datasheet PG-TO220-3-1 Packaging: page 8 IPB022N04L G 2007-11-16 ...

Page 9

... Package Outline Rev. 1.2 PG-TO263-3 page 9 IPB022N04L G 2009-12-11 ...

Page 10

... Rev. 1.2 page 10 IPB022N04L G 2009-12-11 ...

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